| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 16.7 | |
| 5.6@10V | |
| 10.8@4.5V|21.5@10V | |
| 21.5 | |
| 1264@15V | |
| 6160 | |
| 6.2|4.1 | |
| 32.7|27.5 | |
| 16.4|20.3 | |
| 9.5|7.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 5 |
| Lieferantenverpackung | SO-FL EP |
| 5 | |
| Leitungsform | No Lead |
Compared to traditional transistors, NTMFS4925NT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 6160 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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