| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 21.7 | |
| 100 | |
| 1 | |
| 3.4@10V | |
| 14@4.5V|30@10V | |
| 30 | |
| 1972@15V | |
| 6600 | |
| 5|7 | |
| 32|26 | |
| 21|26 | |
| 11|8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 5 |
| Lieferantenverpackung | SO-FL EP |
| 5 | |
| Leitungsform | No Lead |
This NTMFS4C05NT1G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 2570 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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