| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±20 | |
| 2.3 | |
| -55 to 150 | |
| 0.4 | |
| 100 | |
| 1 | |
| 800@10V | |
| 2.18@10V | |
| 2.18 | |
| 70@5V | |
| 225 | |
| 4 | |
| 6 | |
| 18 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 0.8 | |
| 1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Use ON Semiconductor's NTR0202PLT1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 225 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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