| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1.2 | |
| -55 to 150 | |
| 2.4 | |
| 100 | |
| 1 | |
| 85@4.5V | |
| 7.5@4.5V | |
| 2.2 | |
| 1.2 | |
| 1008 | |
| 675@10V | |
| 75@10V | |
| 0.4 | |
| 100 | |
| 1250 | |
| 21 | |
| 12.6 | |
| 30.2 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 112@1.8V|90@2.5V|70@4.5V | |
| 1.25 | |
| 18 | |
| 300 | |
| 0.82 | |
| 1.6 | |
| 12.8 | |
| 1.2 | |
| 0.72 | |
| 8 | |
| 2.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This NTR4101PT1G power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with tmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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