| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| PowerTrench | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1.2 | |
| -55 to 150 | |
| 2.4 | |
| 100 | |
| 1 | |
| 85@4.5V | |
| 7.5@4.5V | |
| 2.2 | |
| 1.2 | |
| 1008 | |
| 675@10V | |
| 75@10V | |
| 0.4 | |
| 100 | |
| 1250 | |
| 21 | |
| 12.6 | |
| 30.2 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 112@1.8V|90@2.5V|70@4.5V | |
| 1.25 | |
| 18 | |
| 300 | |
| 0.82 | |
| 1.6 | |
| 12.8 | |
| 1.2 | |
| 0.72 | |
| 8 | |
| 2.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of ON Semiconductor's NTR4101PT1H power MOSFET. Its maximum power dissipation is 1250 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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