| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| NTTFS4800NTAG | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 5 | |
| 20@11.5V | |
| 8.4@4.5V|16.6@10V | |
| 16.6 | |
| 964@15V | |
| 4500 | |
| 3.4|2.1 | |
| 21.8|19.5 | |
| 14|19 | |
| 11.1|7.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 3.05 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | WDFN EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common source amplifier using this NTTFS4800NTAG power MOSFET from ON Semiconductor. Its maximum power dissipation is 4500 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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