| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 7.7 | |
| 100 | |
| 1 | |
| 17@10V | |
| 5.1@4.5V|10.3@10V | |
| 10.3 | |
| 500@15V | |
| 4100 | |
| 3|2 | |
| 32|25 | |
| 10|13 | |
| 8|4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 3.05 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | WDFN EP |
| 8 | |
| Leitungsform | No Lead |
This NTTFS4C25NTAG power MOSFET from ON Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1630 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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