| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 60 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 0.294 | |
| 10000 | |
| 1 | |
| 1600@10V | |
| 0.7@4.5V | |
| 0.1 | |
| 0.3 | |
| 24.5@20V | |
| 2.2@20V | |
| 1 | |
| 4.2 | |
| 280 | |
| 30.6 | |
| 7.3 | |
| 63.7 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1190@10V|1330@4.5V | |
| 20 | |
| 0.294 | |
| 0.28 | |
| 0.59 | |
| 500 | |
| 0.8 | |
| 2.7 | |
| 1.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55 mm |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-563 |
| 6 | |
| Leitungsform | Flat |
Compared to traditional transistors, NTZD5110NT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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