onsemiNVD4815NT4GMOSFETs
Trans MOSFET N-CH 30V 8.5A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 8.5 | |
| 15@11.5V | |
| 6@4.5V|14.1@11.5V | |
| 770@12V | |
| 1920 | |
| 3.5|2.3 | |
| 21.4|17.6 | |
| 11.4|18.4 | |
| 10.5|6.3 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
This NVD4815NT4G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 1920 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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