onsemiNVMFS4C05NWFT1GMOSFETs
Trans MOSFET N-CH 30V 27.2A 5-Pin DFNW EP T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 27.2 | |
| 100 | |
| 1 | |
| 2.8@10V | |
| 14@4.5V|30@10V | |
| 30 | |
| 1972@15V | |
| 3610 | |
| 5|7 | |
| 32|26 | |
| 21|26 | |
| 11|8 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 5 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFNW EP |
| 5 | |
| Leitungsform | Flat |
Make an effective common source amplifier using this NVMFS4C05NWFT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 3610 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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