onsemiNVR1P02T1GMOSFETs
Trans MOSFET P-CH 20V 1A Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±20 | |
| 1 | |
| 180@10V | |
| 2.5@5V | |
| 165@5V | |
| 400 | |
| 3 | |
| 9 | |
| 9 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this NVR1P02T1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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