NXP SemiconductorsPBSS305ND,115GP BJT
Trans GP BJT NPN 100V 3A 2500mW 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Single Quad Collector | |
| 1 | |
| 100 | |
| 100 | |
| 5 | |
| 0.87@50mA@0.5A|0.89@50mA@1A|0.92@100mA@1A|0.99@150mA@3A|1.02@300mA@3A | |
| 0.06@50mA@0.5A|0.12@50mA@1A|0.19@200mA@2A|0.31@150mA@3A|0.28@300mA@3A|0.36@400mA@4A | |
| 3 | |
| 100 | |
| 170@0.5A@2V|125@1A@2V|70@2A@2V|40@3A@2V|25@4A@2V | |
| 2500 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.7(Max) |
| Verpackungslänge | 3.1(Max) |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 |
If your circuit's specifications require a device that can handle high levels of voltage, NXP Semiconductors' NPN PBSS305ND,115 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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