STMicroelectronicsPD55003L-EHF-MOSFETs
Trans RF MOSFET N-CH 40V 2.5A 8-Pin Power Flat EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Single Quad Drain Quad Gate Quad Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±15 | |
| 20(Min) | |
| 2.5 | |
| 34@12.5V | |
| 1.8@12.5V | |
| 23@12.5V | |
| 1 | |
| 14000 | |
| 3(Min) | |
| 19 | |
| 1000 | |
| 52 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Industrial | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.88 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 5 |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Power Flat EP |
| 8 |
This PD55003L-E RF amplifier from STMicroelectronics is a semiconductor-based transistor that amplifies or switches electronic signals and electrical power in a circuit. Its maximum power dissipation is 14000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 150 °C. Its maximum frequency is 1000 MHz.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.