| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 5.2 | |
| 40@10V | |
| 6.1@4.5V | |
| 495@25V | |
| 1750 | |
| 16 | |
| 19 | |
| 28 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.7(Max) |
| Verpackungslänge | 3.1(Max) |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 |
Make an effective common gate amplifier using this PMN45EN,135 power MOSFET from NXP Semiconductors. Its maximum power dissipation is 1750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with tmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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