NXP SemiconductorsPSMN059-150Y,115MOSFETs
Trans MOSFET N-CH Si 150V 43A 5-Pin(4+Tab) LFPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| -55 to 150 | |
| 43 | |
| 100 | |
| 1 | |
| 59@10V | |
| 27.9@10V | |
| 27.9 | |
| 9.1 | |
| 6.3 | |
| 226 | |
| 1529@30V | |
| 66@30V | |
| 2 | |
| 208 | |
| 113000 | |
| 11.1 | |
| 42 | |
| 54.2 | |
| 14.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 46@10V | |
| 129 | |
| 0.9 | |
| 4.8 | |
| 67 | |
| 1.2 | |
| 3 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) |
| Verpackungsbreite | 4.1(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 4 |
| Tab | Tab |
| Standard-Verpackungsname | FPAK |
| Lieferantenverpackung | LFPAK |
| 5 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this PSMN059-150Y,115 power MOSFET from NXP Semiconductors. Its maximum power dissipation is 113000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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