| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 300 | |
| 300 | |
| 6 | |
| 150 | |
| 0.9@2mA@20mA | |
| 0.5@2mA@20mA | |
| 0.5 | |
| 100 | |
| 25@1mA@10V|40@10mA@10V|40@30mA@10V | |
| 1500 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.57 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN PZTA42T1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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