onsemiS2SC4617GGP BJT
Trans GP BJT NPN 50V 0.1A 125mW 3-Pin SOT-416 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 5 | |
| 0.4@5mA@60mA | |
| 0.1 | |
| 120@1mA@6V | |
| 125 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-416 |
| 3 | |
| Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN S2SC4617G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 125 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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