onsemiSBC846BWT1GGP BJT
Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SC-70 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 6 | |
| -55 to 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.85 |
| Verpackungsbreite | 1.24 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 3 | |
| Leitungsform | Gull-wing |
The versatility of this NPN SBC846BWT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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