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STMicroelectronicsSCT20N120MOSFETs
Trans MOSFET N-CH SiC 1.2KV 20A 3-Pin HIP-247 Tube
| Compliant with Exemption | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 1200 | |
| 25 | |
| 3.5(Typ) | |
| -55 to 200 | |
| 20 | |
| 100 | |
| 100 | |
| 239@20V | |
| 45@20V | |
| 650@400V | |
| 175000 | |
| 17 | |
| 16 | |
| 27 | |
| 10 | |
| -55 | |
| 200 | |
| Industrial | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 20.15(Max) |
| Verpackungsbreite | 5 |
| Verpackungslänge | 15.75(Max) |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | HIP-247 |
| 3 | |
| Leitungsform | Through Hole |
This SCT20N120 power MOSFET from STMicroelectronics can be used for amplification in your circuit. Its maximum power dissipation is 175000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 200 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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