| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±6 | |
| 0.37 | |
| 1200@4.5V | |
| 1.5@4.5V | |
| 250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.6(Max) mm |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.7(Max) mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | SC-89 |
| 6 |
Make an effective common source amplifier using this SI1023X-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.