| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±6 | |
| 1.2 | |
| 0.14 | |
| 3000 | |
| 1 | |
| 5000@4.5V | |
| 0.75@4.5V | |
| 250 | |
| 25(Max) | |
| 25(Max) | |
| 50(Max) | |
| 50(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.7 mm |
| Verpackungsbreite | 0.76 mm |
| Verpackungslänge | 1.58 mm |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | SC-75A |
| 3 |
If you need to either amplify or switch between signals in your design, then Vishay's SI1032R-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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