| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±10 | |
| 1 | |
| 4 | |
| 5000 | |
| 1 | |
| 34@4.5V | |
| 24@8V|14.1@4.5V | |
| 1600 | |
| 1015|985 | |
| 210|420 | |
| 2100|1325 | |
| 72|160 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 6 | |
| Leitungsform | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The SI1401EDH-T1-GE3 power MOSFET from Vishay provides the solution. Its maximum power dissipation is 1600 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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