| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| 0.18um | |
| Enhancement | |
| N|P | |
| 2 | |
| 30 | |
| ±20 | |
| 2.5 | |
| 0.7@N Channel|0.5@P Channel | |
| 100 | |
| 1 | |
| 388@10V@N Channel|890@10V@P Channel | |
| 1@10V|0.55@4.5V@N Channel|1.5@10V|0.8@4.5V@P Channel | |
| 1@N Channel|1.5@P Channel | |
| 28@15V@N Channel|34@15V@P Channel | |
| 290 | |
| 9|15@N Channel|8|10@P Channel | |
| 14|25@N Channel|9|19@P Channel | |
| 11|14@N Channel|4|8@P Channel | |
| 2|26@N Channel|1|32@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 6 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Vishay's SI1539CDL-T1-GE3 power MOSFET can provide a solution. Its maximum power dissipation is 290 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with TrenchFET technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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