| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| 0.18um | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 1.5 | |
| -55 to 150 | |
| 1.1 | |
| 100 | |
| 1 | |
| 235@4.5V | |
| 0.9@4.5V|2@10V | |
| 2 | |
| 0.2 | |
| 0.2 | |
| 8 | |
| 62@10V | |
| 7@10V | |
| 0.6 | |
| 20 | |
| 300 | |
| 10 | |
| 16 | |
| 13 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2 | |
| 2 | |
| 1.2 | |
| 0.8 | |
| 2.4 | |
| 24 | |
| 12 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 6 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this SI1902CDL-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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