| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 1.3 | |
| 25000 | |
| 1 | |
| 198@4.5V | |
| 0.9@4.5V|1.6@8V | |
| 0.2 | |
| 0.1 | |
| 2 | |
| 0.4 | |
| 740 | |
| 220|215 | |
| 80|46 | |
| 480|645 | |
| 43|22 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8 | |
| 4 | |
| 0.8 | |
| 9 | |
| 1.2 | |
| 0.4 | |
| 3.8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 6 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the SI1922EDH-T1-GE3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 740 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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