| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 2.2 | |
| 100@4.5V | |
| 4.5@4.5V | |
| 375@6V | |
| 900 | |
| 20 | |
| 40 | |
| 30 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Use Vishay's SI2301BDS-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 700 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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