| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.85 | |
| -55 to 150 | |
| 2.6 | |
| 100 | |
| 0.1 | |
| 57@4.5V | |
| 3.5@4.5V | |
| 0.45 | |
| 0.6 | |
| 2 | |
| 0.4 | |
| 40 | |
| 860 | |
| 7 | |
| 7 | |
| 30 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 45@4.5V|56@2.5V | |
| 10 | |
| 0.7 | |
| 8.5 | |
| 1.2 | |
| 2 | |
| 8 | |
| 8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This SI2302CDS-T1-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 710 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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