| Compliant | |
| EAR99 | |
| NRND | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 0.85 | |
| 2.6 | |
| 100 | |
| 1 | |
| 57@4.5V | |
| 3.5@4.5V | |
| 710 | |
| 7 | |
| 7 | |
| 30 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3.04(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this SI2302DDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 710 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology.
| EDA / CAD Models |
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