| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 2.7 | |
| 100 | |
| 1 | |
| 190@10V | |
| 2@4.5V|4@10V | |
| 4 | |
| 1 | |
| 0.6 | |
| 9 | |
| 155@15V | |
| 25@15V | |
| 1 | |
| 35 | |
| 1000 | |
| 9 | |
| 37 | |
| 12 | |
| 36 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 158@10V|275@4.5V | |
| 10 | |
| 0.8 | |
| 17 | |
| 1.2 | |
| 1.7 | |
| 17 | |
| 20 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3.04(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI2303CDS-T1-E3 power MOSFET. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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