| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 2.6 | |
| 100 | |
| 0.5 | |
| 70@10V | |
| 2.6@5V|4.6@10V | |
| 4.6 | |
| 1.15 | |
| 0.8 | |
| 225@15V | |
| 28@15V | |
| 1.5 | |
| 50 | |
| 1080 | |
| 15 | |
| 12.5 | |
| 19 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 55@10V|80@4.5V | |
| 1.08 | |
| 10 | |
| 166 | |
| 0.8 | |
| 3.7 | |
| 1.2 | |
| 0.6 | |
| 6 | |
| 20 | |
| 3.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this SI2304BDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology.
| EDA / CAD Models |
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