| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 3 | |
| 45@10V | |
| 10@10V | |
| 10 | |
| 540@20V | |
| 1250 | |
| 15 | |
| 12 | |
| 20 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Use Vishay's SI2318DS-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 750 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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