| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 3 | |
| 2.3 | |
| 82@10V | |
| 11.3@10V | |
| 11.3 | |
| 3.3 | |
| 1.7 | |
| 470@20V | |
| 85 | |
| 1250 | |
| 25 | |
| 15 | |
| 25 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 100@4.5V|65@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3.04(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SI2319DS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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