| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 3.7 | |
| 100 | |
| 1 | |
| 39@4.5V | |
| 12.5@4.5V | |
| 3.3 | |
| 1.7 | |
| 1020@10V | |
| 140@10V | |
| 0.4 | |
| 191 | |
| 1250 | |
| 48 | |
| 43 | |
| 71 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 31@4.5V|41@2.5V|54@1.8V | |
| 1.25 | |
| 20 | |
| 166 | |
| 0.7 | |
| 1.5 | |
| 1.2 | |
| 8 | |
| 4.7 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.92 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI2323DS-T1-E3 power MOSFET. Its maximum power dissipation is 750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This P channel MOSFET transistor operates in enhancement mode. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.

