| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 1 | |
| 7.1 | |
| 35@4.5V | |
| 9@2.5V|15@4.5V | |
| 3.8 | |
| 1.9 | |
| 20 | |
| 1225@6V | |
| 315 | |
| 1250 | |
| 12 | |
| 35 | |
| 45 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 28.5@4.5V|36@2.5V|46@1.8V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.02(Max) mm |
| Verpackungsbreite | 1.4(Max) mm |
| Verpackungslänge | 3.04(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common gate amplifier using this SI2333CDS-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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