| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 4.1 | |
| 100 | |
| 1 | |
| 32@4.5V | |
| 11.5@4.5V | |
| 3.2 | |
| 1.5 | |
| 1100@6V | |
| 300@6V | |
| 0.4 | |
| 390 | |
| 1250 | |
| 60 | |
| 45 | |
| 72 | |
| 25 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 46@1.8V|33@2.5V|25@4.5V | |
| 1.25 | |
| 20 | |
| 166 | |
| 0.7 | |
| 1.4 | |
| 1.2 | |
| 8 | |
| 5.3 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.92 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this SI2333DS-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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