| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 5.9 | |
| 10000 | |
| 1 | |
| 32@4.5V | |
| 13.8@4.5V|23.8@8V | |
| 3 | |
| 1.9 | |
| 5 | |
| 0.4 | |
| 1000 | |
| 14|15 | |
| 21|6 | |
| 62|65 | |
| 22|9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 26.5@4.5V|34@2.5V|46.5@1.8V | |
| 1 | |
| 20 | |
| 175 | |
| 0.8 | |
| 1.5 | |
| 13 | |
| 1.2 | |
| 2.2 | |
| 22 | |
| 8 | |
| 4.5 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.92 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to Vishay, both your amplification and switching needs can be taken care of with one component: the SI2365EDS-T1-GE3 power MOSFET. Its maximum power dissipation is 1000 mW. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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