| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 6 | |
| 100 | |
| 1 | |
| 38@4.5V | |
| 18@4.5V|30@8V | |
| 4.8 | |
| 2.1 | |
| 40 | |
| 1300@10V | |
| 180@10V | |
| 0.4 | |
| 210 | |
| 1600 | |
| 20 | |
| 22 | |
| 50 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 46@1.8V|37@2.5V|31@4.5V | |
| 1.6 | |
| 20 | |
| 110 | |
| 0.8 | |
| 1.6 | |
| 45 | |
| 1.2 | |
| 8 | |
| 5.2 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.65 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this SI3433CDV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1600 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology.
| EDA / CAD Models |
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