| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±20 | |
| -55 to 150 | |
| 1.4 | |
| 750@10V | |
| 8@6V|12.2@10V | |
| 12.2 | |
| 510@50V | |
| 2000 | |
| 12|14 | |
| 11|29 | |
| 28|23 | |
| 9|14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the SI3437DV-T1-E3 power MOSFET from Vishay can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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