| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 150 | |
| ±20 | |
| -55 to 150 | |
| 1.4 | |
| 750@10V | |
| 12.2@10V|8@6V | |
| 12.2 | |
| 510@50V | |
| 2000 | |
| 14|12 | |
| 29|11 | |
| 23|28 | |
| 9|14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.65 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Use Vishay's SI3437DV-T1-GE3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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