| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| -55 to 150 | |
| 7.9 | |
| 100 | |
| 1 | |
| 28@4.5V | |
| 6.7@4.5V|12@8V | |
| 0.5 | |
| 0.95 | |
| 3 | |
| 666@10V | |
| 41@10V | |
| 0.4 | |
| 93 | |
| 1700 | |
| 8 | |
| 11|12 | |
| 21|19 | |
| 6|5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 0.8 | |
| 11 | |
| 1.2 | |
| 0.4 | |
| 4.2 | |
| 8 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.65 |
| Verpackungslänge | 3.05 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the SI3460DDV-T1-GE3 power MOSFET, developed by Vishay. Its maximum power dissipation is 1700 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
UAV-Bedrohungen wirksam abwehren
So entsteht ein integriertes Counter-UAV-Abwehrsystem mit Intelligent Processing, Sensorik und Rapid Response.