| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 8 | |
| 22@4.5V | |
| 26@4.5V|43@8V | |
| 2010@6V | |
| 2000 | |
| 40|35 | |
| 55|15 | |
| 60|62 | |
| 10|20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this SI3473CDV-T1-E3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.