| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 0.9 | |
| 8 | |
| 27.5@4.5V | |
| 26.2@4.5V|29@5V | |
| 1805@10V | |
| 2080 | |
| 84 | |
| 72 | |
| 75 | |
| 22 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SI3493BDV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2080 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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