| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N|P | |
| 2 | |
| 30 | |
| ±20 | |
| 2.5@N Channel|1.8@P Channel | |
| 105@10V@N Channel|200@10V@P Channel | |
| 2.1@5V@N Channel|2.4@5V@P Channel | |
| 1150 | |
| 5@N Channel|7@P Channel | |
| 9@N Channel|12@P Channel | |
| 13@N Channel|12@P Channel | |
| 7@N Channel|8@P Channel | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SI3552DV-T1-E3 power MOSFET. Its maximum power dissipation is 1150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N|P channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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