| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 2.2 | |
| -55 to 150 | |
| 3.7 | |
| 100 | |
| 1 | |
| 58@10V | |
| 1.8@4.5V|3.7@10V | |
| 3.7 | |
| 0.42 | |
| 0.74 | |
| 4 | |
| 235@15V | |
| 16@15V | |
| 1.2 | |
| 45 | |
| 1140 | |
| 10 | |
| 15 | |
| 10 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 47@10V|58@4.5V | |
| 1.14 | |
| 15 | |
| 150 | |
| 0.85 | |
| 2.9 | |
| 10 | |
| 1.2 | |
| 1 | |
| 10 | |
| 20 | |
| 3.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this SI3932DV-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 1140 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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