| Compliant | |
| EAR99 | |
| NRND | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| TrenchFET | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.8 | |
| 11.1 | |
| 100 | |
| 1 | |
| 23@10V | |
| 9.7@4.5V|19.6@10V | |
| 19.6 | |
| 900@50V | |
| 2500 | |
| 9|10 | |
| 14|10 | |
| 19|20 | |
| 11|13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Amplify electronic signals and switch between them with the help of Vishay's SI4056DY-T1-GE3 power MOSFET. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
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