VishaySI4202DY-T1-GE3MOSFETs

Trans MOSFET N-CH 30V 12.1A 8-Pin SOIC N T/R

If you need to either amplify or switch between signals in your design, then Vishay's SI4202DY-T1-GE3 power MOSFET is for you. Its maximum power dissipation is 2400 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

2.500 Stück: Versand in vsl. 2 Tagen

    Total1.067,50 €Price for 2500

    • (2500)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2528+
      Manufacturer Lead Time:
      14 Wochen
      Country Of origin:
      Deutschland
      • In Stock: 2.500 Stück
      • Price: 0,427 €

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