10-25% Rabatt
VishaySI4228DY-T1-GE3MOSFETs
Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 25 | |
| ±12 | |
| 1.4 | |
| 8 | |
| 100 | |
| 1 | |
| 18@10V | |
| 7.8@4.5V|16.5@10V | |
| 16.5 | |
| 790@12.5V | |
| 2000 | |
| 10 | |
| 12 | |
| 21 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this SI4228DY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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