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VishaySI4401BDY-T1-GE3MOSFETs
Trans MOSFET P-CH 40V 8.7A 8-Pin SOIC N T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 40 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 8.7 | |
| 100 | |
| 1 | |
| 14@10V | |
| 40@5V | |
| 14 | |
| 10 | |
| 1 | |
| 400 | |
| 2900 | |
| 47 | |
| 15 | |
| 97 | |
| 16 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 11@10V|16.5@4.5V | |
| 2.9 | |
| 50 | |
| 84 | |
| 0.74 | |
| 3.1 | |
| 35 | |
| 1.1 | |
| 1.4 | |
| 4.2 | |
| 20 | |
| 10.5 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) mm |
| Verpackungsbreite | 4(Max) mm |
| Verpackungslänge | 5(Max) mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
This SI4401BDY-T1-GE3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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