| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.18um | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 13.4 | |
| 15.5@4.5V | |
| 36.5@4.5V|60@8V | |
| 2380@10V | |
| 2500 | |
| 41|40 | |
| 9|16 | |
| 108|101 | |
| 7|14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55(Max) |
| Verpackungsbreite | 4(Max) |
| Verpackungslänge | 5(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this SI4403CDY-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 2500 mW. This device utilizes TrenchFET technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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