| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3 | |
| -55 to 150 | |
| 5.7 | |
| 100 | |
| 1 | |
| 30@10V | |
| 13@5V | |
| 6 | |
| 3.6 | |
| 1 | |
| 199 | |
| 2500 | |
| 47 | |
| 10 | |
| 70 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 36@4.5V|23@10V | |
| 20 | |
| 7.5 | |
| 2.5 | |
| 30 | |
| 85 | |
| 0.78 | |
| 3.8 | |
| 45 | |
| 1.1 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.38 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC N |
| 8 | |
| Leitungsform | Gull-wing |
Use Vishay's SI4431BDY-T1-E3 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes TrenchFET technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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